Home / Single FETs, MOSFETs / AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

Infineon Technologies

Product No:

AIMW120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 52A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 242

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    23.484

    23.484

  • 10

    20.87245

    208.7245

  • 100

    18.255485

    1825.5485

  • 500

    15.577986

    7788.993

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +20V, -7V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 10mA
Base Product Number AIMW120
Operating Temperature -40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Power Dissipation (Max) 228W (Tc)
Supplier Device Package PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 800 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)