BAS316,H3F
Toshiba Semiconductor and Storage
Product No:
BAS316,H3F
Manufacturer:
Package:
USC
Batch:
-
Datasheet:
-
Description:
DIODE GEN PURP 100V 250MA USC
Quantity:
Delivery:
Payment:
In Stock : 1053 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.1615
0.1615
10
0.1178
1.178
100
0.063365
6.3365
500
0.049742
24.871
1000
0.034542
34.542
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Product Status | Active |
| Base Product Number | BAS316 |
| Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz |
| Supplier Device Package | USC |
| Reverse Recovery Time (trr) | 3 ns |
| Current - Reverse Leakage @ Vr | 200 nA @ 80 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 250mA |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
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