BSB056N10NN3GXUMA1
Infineon Technologies
Product No:
BSB056N10NN3GXUMA1
Manufacturer:
Package:
MG-WDSON-2, CanPAK M™
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 9A/83A 2WDSON
Quantity:
Delivery:
Payment:
In Stock : 24226 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.5625
3.5625
10
3.2034
32.034
100
2.62428
262.428
500
2.23402
1117.01
1000
1.884116
1884.116
2000
1.789914
3579.828
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Base Product Number | BSB056 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 30A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
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