Home / Single FETs, MOSFETs / BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

Infineon Technologies

Product No:

BSC100N10NSFGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 11.4/90A 8TDSON

Quantity:

Delivery:

Payment:

In Stock : 13055

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.185

    2.185

  • 10

    1.9627

    19.627

  • 100

    1.57776

    157.776

  • 500

    1.296294

    648.147

  • 1000

    1.07406

    1074.06

  • 2000

    0.999989

    1999.978

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 110µA
Base Product Number BSC100
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Power Dissipation (Max) 156W (Tc)
Supplier Device Package PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.4A (Ta), 90A (Tc)