BSC123N10LSGATMA1

Infineon Technologies

Product No:

BSC123N10LSGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 10.6/71A 8TDSON

Quantity:

Delivery:

Payment:

In Stock : 27858

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.843

    1.843

  • 10

    1.65965

    16.5965

  • 100

    1.33399

    133.399

  • 500

    1.095958

    547.979

  • 1000

    0.908086

    908.086

  • 2000

    0.845462

    1690.924

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 72µA
Base Product Number BSC123
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 12.3mOhm @ 50A, 10V
Power Dissipation (Max) 114W (Tc)
Supplier Device Package PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 71A (Tc)