BSM180D12P2C101
Rohm Semiconductor
Product No:
BSM180D12P2C101
Manufacturer:
Package:
Module
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 1200V 180A MODULE
Quantity:
Delivery:
Payment:
In Stock : 1 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
448.552
448.552
10
435.06105
4350.6105
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Power - Max | 1130W |
| Configuration | 2 N-Channel (Half Bridge) |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Base Product Number | BSM180 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
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