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BSZ110N06NS3GATMA1

Infineon Technologies

Product No:

BSZ110N06NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 20A 8TSDSON

Quantity:

Delivery:

Payment:

In Stock : 13186

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.817

    0.817

  • 10

    0.73055

    7.3055

  • 100

    0.56962

    56.962

  • 500

    0.470535

    235.2675

  • 1000

    0.371469

    371.469

  • 2000

    0.346712

    693.424

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 23µA
Base Product Number BSZ110
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)