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BSZ16DN25NS3GATMA1

Infineon Technologies

Product No:

BSZ16DN25NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 10.9A 8TSDSON

Quantity:

Delivery:

Payment:

In Stock : 4990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.0235

    2.0235

  • 10

    1.6815

    16.815

  • 100

    1.33855

    133.855

  • 500

    1.132609

    566.3045

  • 1000

    0.961001

    961.001

  • 2000

    0.91295

    1825.9

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 32µA
Base Product Number BSZ16DN25
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 165mOhm @ 5.5A, 10V
Power Dissipation (Max) 62.5W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)