BUZ100S

Infineon Technologies

Product No:

BUZ100S

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Package:

PG-TO220-3-1

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Description:

N-CHANNEL POWER MOSFET

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In Stock : 4031

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Parameter Info

User Guide

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 130µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	15mOhm @ 55A, 10V
Power Dissipation (Max)	170W (Tc)
Supplier Device Package	PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Drain to Source Voltage (Vdss)	55 V
Input Capacitance (Ciss) (Max) @ Vds	2375 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	77A (Tc)