BUZ31H3046

Infineon Technologies

Product No:

BUZ31H3046

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 700

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 495

    0.5795

    286.8525

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 5V
Power Dissipation (Max) 95W (Tc)
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 1120 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc)