BYV30JT-600PQ
WeEn Semiconductors
Product No:
BYV30JT-600PQ
Manufacturer:
Package:
TO-3P
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 30A TO3P
Quantity:
Delivery:
Payment:
In Stock : 3840 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.8715
1.8715
10
1.55135
15.5135
100
1.234905
123.4905
500
1.044886
522.443
1000
0.886578
886.578
2000
0.842251
1684.502
5000
0.810588
4052.94
10000
0.78375
7837.5
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Product Information
Parameter Info
User Guide
| Mfr | WeEn Semiconductors |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tube |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Base Product Number | BYV30 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | TO-3P |
| Reverse Recovery Time (trr) | 65 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 30A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
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