FESB16JT-E3/45
Vishay General Semiconductor - Diodes Division
Product No:
FESB16JT-E3/45
Manufacturer:
Package:
TO-263AB (D²PAK)
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 600V 16A TO263AB
Quantity:
Delivery:
Payment:
In Stock : 1121 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.634
1.634
10
1.4649
14.649
100
1.177145
117.7145
500
0.967176
483.588
1000
0.801372
801.372
2000
0.746111
1492.222
5000
0.718476
3592.38
10000
0.69084
6908.4
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Product Information
Parameter Info
User Guide
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tube |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Base Product Number | FESB16 |
| Capacitance @ Vr, F | 145pF @ 4V, 1MHz |
| Supplier Device Package | TO-263AB (D²PAK) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 16A |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 16 A |
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