FQE10N20CTU

Fairchild Semiconductor

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FQE10N20CTU

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Package:

TO-126-3

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Description:

MOSFET N-CH 200V 4A TO126-3

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Parameter Info

User Guide

Mfr	Fairchild Semiconductor
Series	QFET®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Power Dissipation (Max)	12.8W (Tc)
Supplier Device Package	TO-126-3
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)