G080P06T

Goford Semiconductor

Product No:

G080P06T

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Package:

TO-220

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Description:

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

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Parameter Info

User Guide

Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 20A, 10V
Power Dissipation (Max)	294W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	186 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	15195 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)