GAN190-650EBEZ
Nexperia USA Inc.
Product No:
GAN190-650EBEZ
Manufacturer:
Package:
DFN8080-8
Batch:
-
Datasheet:
Description:
650 V, 190 MOHM GALLIUM NITRIDE
Quantity:
Delivery:
Payment:
In Stock : 2401 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
4.522
4.522
10
3.79525
37.9525
100
3.0704
307.04
500
2.729274
1364.637
1000
2.336943
2336.943
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Product Information
Parameter Info
User Guide
| Mfr | Nexperia USA Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +7V, -1.4V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-VDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
| Base Product Number | GAN190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
| Power Dissipation (Max) | 125W (Ta) |
| Supplier Device Package | DFN8080-8 |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
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