GT080N10T

Goford Semiconductor

Product No:

GT080N10T

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

N100V, 70A,RD<8M@10V,VTH1.0V~3.0

Quantity:

Delivery:

Payment:

In Stock : 62

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

User Guide

Mfr	Goford Semiconductor
Series	GT
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	8mOhm @ 50A, 10V
Power Dissipation (Max)	100W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2257 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)