GT30J121(Q)

Toshiba Semiconductor and Storage

Product No:

GT30J121(Q)

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Package:

TO-3P(N)

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Description:

IGBT 600V 30A 170W TO3PN

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	170 W
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Test Condition	300V, 30A, 24Ohm, 15V
Switching Energy	1mJ (on), 800µJ (off)
Base Product Number	GT30J121
Td (on/off) @ 25°C	90ns/300ns
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Voltage - Collector Emitter Breakdown (Max)	600 V