Home / Single FETs, MOSFETs / IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

Infineon Technologies

Product No:

IAUC100N04S6N028ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Batch:

-

Datasheet:

-

Description:

IAUC100N04S6N028ATMA1

Quantity:

Delivery:

Payment:

In Stock : 10598

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.026

    1.026

  • 10

    0.836

    8.36

  • 100

    0.650465

    65.0465

  • 500

    0.551304

    275.652

  • 1000

    0.449103

    449.103

  • 2000

    0.422778

    845.556

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 3V @ 24µA
Base Product Number IAUC100
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.86mOhm @ 50A, 10V
Power Dissipation (Max) 62W (Tc)
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)