IDH03G65C5XKSA2
Infineon Technologies
Product No:
IDH03G65C5XKSA2
Manufacturer:
Package:
PG-TO220-2-1
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 3A TO220-2-1
Quantity:
Delivery:
Payment:
In Stock : 460 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.7575
1.7575
10
1.4611
14.611
100
1.16318
116.318
500
0.984257
492.1285
1000
0.835126
835.126
2000
0.793374
1586.748
5000
0.763544
3817.72
10000
0.738274
7382.74
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | CoolSiC™+ |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Not For New Designs |
| Base Product Number | IDH03G65 |
| Capacitance @ Vr, F | 100pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2-1 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
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