IDH04G65C6XKSA1

Infineon Technologies

Product No:

IDH04G65C6XKSA1

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Package:

PG-TO220-2

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Description:

DIODE SIL CARB 650V 12A TO220-2

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In Stock : 13441

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Parameter Info

User Guide

Mfr	Infineon Technologies
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Base Product Number	IDH04G65
Capacitance @ Vr, F	205pF @ 1V, 1MHz
Supplier Device Package	PG-TO220-2
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	12A
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 4 A