IMBG120R350M1HXTMA1
Infineon Technologies
Product No:
IMBG120R350M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1.2KV 4.7A TO263
Quantity:
Delivery:
Payment:
In Stock : 717 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
8.1035
8.1035
10
6.94355
69.4355
100
5.786165
578.6165
500
5.105452
2552.726
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +18V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |
| Base Product Number | IMBG120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 468mOhm @ 2A, 18V |
| Power Dissipation (Max) | 65W (Tc) |
| Supplier Device Package | PG-TO263-7-12 |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
