IMBG65R048M1HXTMA1
Infineon Technologies
Product No:
IMBG65R048M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Batch:
-
Datasheet:
-
Description:
SILICON CARBIDE MOSFET PG-TO263-
Quantity:
Delivery:
Payment:
In Stock : 1009 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
12.559
12.559
10
11.0675
110.675
100
9.572105
957.2105
500
8.674735
4337.3675
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +23V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Base Product Number | IMBG65 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Power Dissipation (Max) | 183W (Tc) |
| Supplier Device Package | PG-TO263-7-12 |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
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