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IMW120R060M1HXKSA1

Infineon Technologies

Product No:

IMW120R060M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 36A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 955

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    13.7085

    13.7085

  • 10

    12.0802

    120.802

  • 100

    10.447815

    1044.7815

  • 500

    9.468327

    4734.1635

  • 1000

    8.684738

    8684.738

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +23V, -7V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Base Product Number IMW120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)