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IMW120R140M1HXKSA1

Infineon Technologies

Product No:

IMW120R140M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 19A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 230

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    9.671

    9.671

  • 10

    8.28875

    82.8875

  • 100

    6.90764

    690.764

  • 500

    6.094934

    3047.467

  • 1000

    5.485442

    5485.442

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +23V, -7V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 2.5mA
Base Product Number IMW120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 182mOhm @ 6A, 18V
Power Dissipation (Max) 94W (Tc)
Supplier Device Package PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)