IMW120R220M1HXKSA1
Infineon Technologies
Product No:
IMW120R220M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1.2KV 13A TO247-3
Quantity:
Delivery:
Payment:
In Stock : 1323 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
8.6355
8.6355
10
7.40335
74.0335
100
6.169205
616.9205
500
5.443386
2721.693
1000
4.899046
4899.046
2000
4.59059
9181.18
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +23V, -7V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 1.6mA |
| Base Product Number | IMW120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 286mOhm @ 4A, 18V |
| Power Dissipation (Max) | 75W (Tc) |
| Supplier Device Package | PG-TO247-3-41 |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 289 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
