IMW65R027M1HXKSA1

Infineon Technologies

Product No:

IMW65R027M1HXKSA1

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Package:

PG-TO247-3-41

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Description:

MOSFET 650V NCH SIC TRENCH

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Parameter Info

User Guide

Mfr	Infineon Technologies
Series	CoolSIC™ M1
Package	Tube
FET Type	N-Channel
Vgs (Max)	+23V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 11mA
Base Product Number	IMW65R027
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	34mOhm @ 38.3A, 18V
Power Dissipation (Max)	189W (Tc)
Supplier Device Package	PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)