IMW65R083M1HXKSA1
Infineon Technologies
Product No:
IMW65R083M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Batch:
-
Datasheet:
-
Description:
SILICON CARBIDE MOSFET, PG-TO247
Quantity:
Delivery:
Payment:
In Stock : 115 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
10.1175
10.1175
10
8.911
89.11
100
7.706875
770.6875
500
6.984343
3492.1715
1000
6.406325
6406.325
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -2V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
| Base Product Number | IMW65R |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
| Power Dissipation (Max) | 104W (Tc) |
| Supplier Device Package | PG-TO247-3-41 |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
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