IMZ120R045M1XKSA1

Infineon Technologies

Product No:

IMZ120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-1

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 52A TO247-4

Quantity:

Delivery:

Payment:

In Stock : 109

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    18.5725

    18.5725

  • 10

    16.50435

    165.0435

  • 30

    15.3976

    461.928

  • 90

    14.435354

    1299.18186

  • 240

    13.473024

    3233.52576

  • 450

    12.318204

    5543.1918

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolSiC™
Package Tray
FET Type N-Channel
Vgs (Max) +20V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature Current Sensing
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Not For New Designs
Vgs(th) (Max) @ Id 5.7V @ 10mA
Base Product Number IMZ120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Power Dissipation (Max) 228W (Tc)
Supplier Device Package PG-TO247-4-1
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)