IMZ120R090M1HXKSA1
Infineon Technologies
Product No:
IMZ120R090M1HXKSA1
Manufacturer:
Package:
PG-TO247-4-1
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1.2KV 26A TO247-4
Quantity:
Delivery:
Payment:
In Stock : 615 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
12.3785
12.3785
10
10.9022
109.022
100
9.42856
942.856
500
8.544661
4272.3305
1000
7.83751
7837.51
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +23V, -7V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Base Product Number | IMZ120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
| Power Dissipation (Max) | 115W (Tc) |
| Supplier Device Package | PG-TO247-4-1 |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 707 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
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