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IMZ120R140M1HXKSA1

Infineon Technologies

Product No:

IMZ120R140M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-1

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 19A TO247-4

Quantity:

Delivery:

Payment:

In Stock : 235

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    10.146

    10.146

  • 10

    8.93475

    89.3475

  • 100

    7.7273

    772.73

  • 500

    7.002849

    3501.4245

  • 1000

    6.423302

    6423.302

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +23V, -7V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 2.5mA
Base Product Number IMZ120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 182mOhm @ 6A, 18V
Power Dissipation (Max) 94W (Tc)
Supplier Device Package PG-TO247-4-1
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)