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IMZ120R220M1HXKSA1

Infineon Technologies

Product No:

IMZ120R220M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-1

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 13A TO247-4

Quantity:

Delivery:

Payment:

In Stock : 409

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    10.0795

    10.0795

  • 10

    8.6431

    86.431

  • 100

    7.20271

    720.271

  • 500

    6.355291

    3177.6455

  • 1000

    5.71977

    5719.77

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +23V, -7V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 1.6mA
Base Product Number IMZ120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 220mOhm @ 4A, 18V
Power Dissipation (Max) 75W (Tc)
Supplier Device Package PG-TO247-4-1
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 289 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)