IPA65R1K5CEXKSA1
Infineon Technologies
Product No:
IPA65R1K5CEXKSA1
Manufacturer:
Package:
PG-TO220-FP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 5.2A TO220
Quantity:
Delivery:
Payment:
In Stock : 500 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.0545
1.0545
10
0.94335
9.4335
100
0.7353
73.53
500
0.607449
303.7245
1000
0.47956
479.56
2000
0.447592
895.184
5000
0.42521
2126.05
10000
0.409222
4092.22
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Base Product Number | IPA65R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
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