IPA80R1K4CEXKSA2
Infineon Technologies
Product No:
IPA80R1K4CEXKSA2
Manufacturer:
Package:
PG-TO220-FP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 800V 3.9A TO220
Quantity:
Delivery:
Payment:
In Stock : 485 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.52
1.52
10
1.3623
13.623
100
1.094875
109.4875
500
0.899498
449.749
1000
0.745304
745.304
2000
0.693908
1387.816
5000
0.668202
3341.01
10000
0.642504
6425.04
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Base Product Number | IPA80R1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
| Power Dissipation (Max) | 31W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
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