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IPAN60R125PFD7SXKSA1

Infineon Technologies

Product No:

IPAN60R125PFD7SXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-FP

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 25A TO220

Quantity:

Delivery:

Payment:

In Stock : 2407

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.6315

    2.6315

  • 10

    2.2116

    22.116

  • 100

    1.788945

    178.8945

  • 500

    1.590167

    795.0835

  • 1000

    1.361578

    1361.578

  • 2000

    1.282072

    2564.144

  • 5000

    1.230012

    6150.06

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™PFD7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 390µA
Base Product Number IPAN60
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 7.8A, 10V
Power Dissipation (Max) 32W (Tc)
Supplier Device Package PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1503 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)