IPAN60R280P7SXKSA1
Infineon Technologies
Product No:
IPAN60R280P7SXKSA1
Manufacturer:
Package:
PG-TO220 Full Pack
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 12A TO220
Quantity:
Delivery:
Payment:
In Stock : 470 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.444
1.444
10
1.19795
11.9795
100
0.953515
95.3515
500
0.806778
403.389
1000
0.684542
684.542
2000
0.650322
1300.644
5000
0.62587
3129.35
10000
0.60515
6051.5
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Base Product Number | IPAN60 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V |
| Power Dissipation (Max) | 24W (Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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