IPAN60R360PFD7SXKSA1
Infineon Technologies
Product No:
IPAN60R360PFD7SXKSA1
Manufacturer:
Package:
PG-TO220-FP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 10A TO220
Quantity:
Delivery:
Payment:
In Stock : 460 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.501
1.501
10
1.22835
12.2835
100
0.95513
95.513
500
0.809552
404.776
1000
0.659462
659.462
2000
0.620806
1241.612
5000
0.591242
2956.21
10000
0.563958
5639.58
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™PFD7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Base Product Number | IPAN60 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| Power Dissipation (Max) | 23W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 534 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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