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IPAN60R600P7SXKSA1

Infineon Technologies

Product No:

IPAN60R600P7SXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 6A TO220

Quantity:

Delivery:

Payment:

In Stock : 400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.1115

    1.1115

  • 10

    0.90915

    9.0915

  • 100

    0.707275

    70.7275

  • 500

    0.599469

    299.7345

  • 1000

    0.488338

    488.338

  • 2000

    0.459714

    919.428

  • 5000

    0.437817

    2189.085

  • 10000

    0.41761

    4176.1

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 80µA
Base Product Number IPAN60
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Power Dissipation (Max) 21W (Tc)
Supplier Device Package PG-TO220 Full Pack
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)