IPAN65R650CEXKSA1
Infineon Technologies
Product No:
IPAN65R650CEXKSA1
Manufacturer:
Package:
PG-TO220-FP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 10.1A TO220
Quantity:
Delivery:
Payment:
In Stock : 497 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.3015
1.3015
10
1.1628
11.628
100
0.906775
90.6775
500
0.749094
374.547
1000
0.591384
591.384
2000
0.551969
1103.938
5000
0.524362
2621.81
10000
0.50465
5046.5
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Base Product Number | IPAN65 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
