IPAW60R180P7SXKSA1
Infineon Technologies
Product No:
IPAW60R180P7SXKSA1
Manufacturer:
Package:
PG-TO220 Full Pack
Batch:
-
Datasheet:
-
Description:
MOSFET N-CHANNEL 650V 18A TO220
Quantity:
Delivery:
Payment:
In Stock : 1254 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.9665
1.9665
10
1.6302
16.302
100
1.297225
129.7225
500
1.097611
548.8055
1000
0.931314
931.314
2000
0.884744
1769.488
5000
0.851485
4257.425
10000
0.823298
8232.98
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 280µA |
| Base Product Number | IPAW60 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V |
| Power Dissipation (Max) | 26W (Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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