IPB011N04LGATMA1

Infineon Technologies

Product No:

IPB011N04LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 180A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 2995

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    4.997

    4.997

  • 10

    4.4859

    44.859

  • 100

    3.675455

    367.5455

  • 500

    3.128844

    1564.422

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Active
Vgs(th) (Max) @ Id 2V @ 200µA
Base Product Number IPB011
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V
Power Dissipation (Max) 250W (Tc)
Supplier Device Package PG-TO263-7-3
Gate Charge (Qg) (Max) @ Vgs 346 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 29000 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)