IPB017N08N5ATMA1
Infineon Technologies
Product No:
IPB017N08N5ATMA1
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 80V 120A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 477 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.89
5.89
10
5.04925
50.4925
100
4.208025
420.8025
500
3.71298
1856.49
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 280µA |
| Base Product Number | IPB017 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 223 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16900 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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