IPB019N06L3GATMA1

Infineon Technologies

Product No:

IPB019N06L3GATMA1

Manufacturer:

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 120A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 7756

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

User Guide

Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 196µA
Base Product Number	IPB019
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs	166 nC @ 4.5 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)