IPB019N08N3GATMA1
Infineon Technologies
Product No:
IPB019N08N3GATMA1
Manufacturer:
Package:
PG-TO263-7
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 80V 180A TO263-7
Quantity:
Delivery:
Payment:
In Stock : 9956 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.8235
5.8235
10
5.2611
52.611
100
4.355465
435.5465
500
3.792723
1896.3615
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA |
| Base Product Number | IPB019 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | PG-TO263-7 |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14200 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
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