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IPB019N08NF2SATMA1

Infineon Technologies

Product No:

IPB019N08NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

TRENCH 40<-<100V PG-TO263-3

Quantity:

Delivery:

Payment:

In Stock : 494

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.983

    2.983

  • 10

    2.5061

    25.061

  • 100

    2.0273

    202.73

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 194µA
Base Product Number IPB019N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.95mOhm @ 100A, 10V
Power Dissipation (Max) 250W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 166A (Tc)