Home / Single FETs, MOSFETs / IPB024N08NF2SATMA1

IPB024N08NF2SATMA1

Infineon Technologies

Product No:

IPB024N08NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

TRENCH 40<-<100V PG-TO263-3

Quantity:

Delivery:

Payment:

In Stock : 779

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.8405

    2.8405

  • 10

    2.3845

    23.845

  • 100

    1.92869

    192.869

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 85µA
Base Product Number IPB024N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 107A (Tc)