IPB027N10N3GATMA1

Infineon Technologies

Product No:

IPB027N10N3GATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 100V 120A D2PAK

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Parameter Info

User Guide

Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 275µA
Base Product Number	IPB027
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 100A, 10V
Power Dissipation (Max)	300W (Tc)
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)