IPB036N12N3GATMA1

Infineon Technologies

Product No:

IPB036N12N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 180A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 1120

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    5.852

    5.852

  • 10

    5.2839

    52.839

  • 100

    4.374465

    437.4465

  • 500

    3.809234

    1904.617

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Base Product Number IPB036
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)