IPB039N10N3GATMA1

Infineon Technologies

Product No:

IPB039N10N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 160A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.7835

    2.7835

  • 10

    2.49565

    24.9565

  • 100

    2.045065

    204.5065

  • 500

    1.740894

    870.447

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Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 160µA
Base Product Number IPB039
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 100A, 10V
Power Dissipation (Max) 214W (Tc)
Supplier Device Package PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)