IPB65R660CFDAATMA1
Infineon Technologies
Product No:
IPB65R660CFDAATMA1
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 6A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 2000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.508
2.508
10
2.25435
22.5435
100
1.81222
181.222
500
1.488878
744.439
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Base Product Number | IPB65R660 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
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