IPD055N08NF2SATMA1
Infineon Technologies
Product No:
IPD055N08NF2SATMA1
Manufacturer:
Package:
PG-TO252-3
Batch:
-
Datasheet:
-
Description:
MOSFET
Quantity:
Delivery:
Payment:
In Stock : 2000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.615
1.615
10
1.34425
13.4425
100
1.07008
107.008
500
0.905426
452.713
1000
0.768236
768.236
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | StrongIRFET™ 2 |
| Package | Cut Tape (CT) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 55µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 60A, 10V |
| Power Dissipation (Max) | 3W (Ta), 107W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 98A (Tc) |
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